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| 2SK2737 Silicon N Channel MOS FET High Speed Power Switching ADE-208-533B(Z) 3rd. Edition June 1, 1998 Features * Low on-resistance R DS(on) = 10 m typ. * 4V gate drive devices. * High speed switching Outline TO-220CFM D G 12 3 S 1. Gate 2. Drain 3. Source 2SK2737 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 30 20 45 180 45 30 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Symbol Min 30 20 -- -- 1.0 -- -- 20 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 10 15 30 1570 1100 410 32 300 180 200 1.0 75 Max -- -- 10 10 2.0 14 25 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns I F = 45A, VGS = 0 I F = 45A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 30 V, VGS = 0 I D = 1mA, VDS = 10VNote3 I D = 20A, VGS = 10VNote3 I D = 20A, VGS = 4VNote3 I D = 20A, VDS = 10VNote3 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 25A RL = 0.4 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test V(BR)GSS I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK2737 Main Characteristics Power vs. Temperature Derating 40 Pch (W) I D (A) 500 200 100 50 20 10 5 2 Maximum Safe Operation Area 10 0 s 10 PW s 30 1 m Channel Dissipation Drain Current D = C s 10 20 O pe m s (1 tio ra 10 n Operation in (T c this area is = 25 limited by R DS(on) C 0 50 100 150 Tc (C) 200 Case Temperature 1 Ta = 25 C 0.5 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) sh ot ) ) Typical Output Characteristics 10 V 8 V 100 6V I D (A) 80 5V 4.5 V 4V (A) 80 Pulse Test 100 Typical Transfer Characteristics Tc = -25C 25C 75C 60 ID Drain Current 60 Drain Current 40 3.5 V 3V VGS = 2.5 V 40 20 20 V DS = 10 V Pulse Test 2 4 6 Gate to Source Voltage 8 10 V GS (V) 0 2 4 6 Drain to Source Voltage 8 V DS (V) 10 0 3 2SK2737 Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance R DS(on) (m ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Drain to Source Saturation Voltage V DS(on) (V) 100 Pulse Test 50 Pulse Test 0.8 0.6 I D = 50 A 0.4 20 A 10 A 0 12 4 8 Gate to Source Voltage 16 20 V GS (V) 20 VGS = 4 V 10 10 V 0.2 5 1 2 10 20 50 5 Drain Current I D (A) 100 Static Drain to Source on State Resistance R DS(on) (m ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 40 Forward Transfer Admittance vs. Drain Current 50 20 10 5 75 C 2 1 0.5 0.1 V DS = 10 V Pulse Test 0.3 30 1 3 10 Drain Current I D (A) 100 Tc = -25 C 25 C 30 I D = 20 A 20 VGS = 4 V 10 A 10 10 V 0 -40 50 A 10, 20 A 0 40 80 120 160 Case Temperature Tc (C) 4 2SK2737 Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 200 100 50 20 10 0.1 10000 5000 Capacitance C (pF) 2000 1000 500 200 100 50 0 10 20 30 Crss VGS = 0 f = 1 MHz 40 50 Ciss Coss Typical Capacitance vs. Drain to Source Voltage di / dt = 50 A / s V GS = 0, Ta = 25 C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) I D = 45 A 40 V GS V DS VDD = 5 V 10 V 15 V 16 V GS (V) 50 20 1000 500 Switching Time t (ns) 200 100 50 20 10 0.1 Switching Characteristics t d(off) tf tr t d(on) V GS = 10 V, V DD = 10 V PW = 5 s, duty < 1 % 0.3 1 3 Drain Current 30 10 I D (A) 100 Drain to Source Voltage 30 12 20 8 10 VDD = 15 V 10 V 5V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 0 Gate to Source Voltage 5 2SK2737 Reverse Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current I DR (A) 10 V 5V 60 V GS = 0, -5 V 80 40 20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 1 0.0 ch - c(t) = s (t) * ch - c ch - c = 4.17 C/W, Tc = 25 C PDM D= PW T 0.03 PW T 0.01 10 1s t ho pu lse 100 1m 10 m 100 m Pulse Width PW (S) 1 10 6 2SK2737 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 10 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform 90% 7 2SK2737 Package Dimensions (Unit: mm) 10.0 0.3 3.2 0.2 2.7 0.2 0.6 0.1 2.54 0.5 2.54 0.5 4.1 0.3 2.5 0.2 0.7 0.1 Hitachi Code TO-220CFM -- EIAJ -- JEDEC 8 13.6 1.0 1.0 0.2 1.15 0.2 12.0 0.3 4.45 0.3 15.0 0.3 2SK2737 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright (c) Hitachi, Ltd., 1997. All rights reserved. Printed in Japan. 9 |
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